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PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor

Guangzhou Topfast Technology Co., Ltd.
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    Buy cheap PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor from wholesalers
     
    Buy cheap PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor from wholesalers
    • Buy cheap PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor from wholesalers
    • Buy cheap PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor from wholesalers

    PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor

    Ask Lasest Price
    Brand Name : Nexperia USA Inc
    Model Number : PBHV8540X,115
    Payment Terms : T/T
    Delivery Time : 2~8 workdays
    MOQ : 1 pc
    Price : Negotiated
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    PBHV8540X Discrete Semiconductor Devices PBHV8540 Nexperia Bipolar BJT Transistor

    Product Description


    PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors


    PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor

    Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor


    Description:

    NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040X.


    Application:

    • LED driver for LED chain module

    • LCD backlighting

    • Automotive motor management

    • Hook switch for wired telecom

    • Switch Mode Power Supply (SMPS)


    Features :

    • High voltage

    • Low collector-emitter saturation voltage VCEsat

    • High collector current capability IC and ICM

    • High collector current gain hFE at high IC

    • AEC-Q101 qualified


    Name Description Version

    PBHV8540X SOT89 plastic surface-mounted package; die pad for good heat transfer; 3 leads

    Product Technical Specifications


    Category
    Discrete Semiconductor Products
     
    Transistors - Bipolar (BJT) - Single
    Mfr
    Nexperia USA Inc.
    Part Status
    Active
    Transistor Type
    NPN
    Current - Collector (Ic) (Max)
    500 mA
    Voltage - Collector Emitter Breakdown (Max)
    400 V
    Vce Saturation (Max) @ Ib, Ic
    250mV @ 60mA, 300mA
    Current - Collector Cutoff (Max)
    100nA
    DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 50mA, 10V
    Power - Max
    520 mW
    Frequency - Transition
    30MHz
    Operating Temperature
    150°C (TJ)
    Mounting Type
    Surface Mount
    Package / Case
    TO-243AA
    Supplier Device Package
    SOT-89
    Base Product Number
    PBHV8540
    Part numberPBHV8540X,115
    EU RoHSCompliant with Exemption
    ECCN (US)EAR99
    Part StatusActive
    HTS8541.29.00.95

    Images:

    PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors 0PBHV8540X PBHV8540 Nexperia Bipolar BJT Transistor Discrete Semiconductors 1



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