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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

    Buy cheap IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET from wholesalers
     
    Buy cheap IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET from wholesalers
    • Buy cheap IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET from wholesalers
    • Buy cheap IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET from wholesalers

    IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

    Ask Lasest Price
    Brand Name : Infineon Technologies/International Rectifier IOR
    Model Number : IRF1404ZPBF
    Payment Terms : T/T
    Delivery Time : 2~8 workdays
    MOQ : 1 pc
    Price : Negotiated
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    IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

    Product Description

    IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET


    IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs


    N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

    Category
    Discrete Semiconductor Products
     
    Transistors - FETs, MOSFETs - Single
    Mfr
    Infineon Technologies
    Series
    HEXFET®
    Package
    Tube
    FET Type
    N-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    40 V
    Current - Continuous Drain (Id) @ 25°C
    180A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)
    10V
    Rds On (Max) @ Id, Vgs
    3.7mOhm @ 75A, 10V
    Vgs(th) (Max) @ Id
    4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs
    150 nC @ 10 V
    Vgs (Max)
    ±20V
    Input Capacitance (Ciss) (Max) @ Vds
    4340 pF @ 25 V
    FET Feature
    -
    Power Dissipation (Max)
    200W (Tc)
    Operating Temperature
    -55°C ~ 175°C (TJ)
    Mounting Type
    Through Hole
    Supplier Device Package
    TO-220AB
    Package / Case
    TO-220-3
    Base Product Number
    IRF1404

    Description

    This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

    Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

    Quality IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET for sale
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