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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

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Guangzhou Topfast Technology Co., Ltd.

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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

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Brand Name :	Infineon Technologies/International Rectifier IOR
Model Number :	IRF1404ZPBF
Payment Terms :	T/T
Delivery Time :	2~8 workdays
MOQ :	1 pc
Price :	Negotiated

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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

Product Description

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

IRF1404ZPBF Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs

N-Channel 180A (Tc) 200W (Tc) Through Hole TO-220AB Specification:

Category	Discrete Semiconductor Products
	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4340 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRF1404

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Product Tags:

200W N Channel Transistor

180A N Channel Transistor

IRF1404ZPBF

IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET

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