BTS282Z E3230 TO220-7 N Channel MOSFET 49V 80A Transistors FETs

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Brand Name :	Infineon Technologies/International Rectifier IOR
Model Number :	BTS282Z E3230
Payment Terms :	T/T
Delivery Time :	2~8 workdays
MOQ :	1 pc
Price :	Negotiated

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Product Description

BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs

BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW.

In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more

protection by storing the loose parts in an outer tube.

This MOSFET transistor has an operating temperature range of -40 °C to 175 °C.

This N channel MOSFET transistor operates in enhancement mode.

Specification:

Category	Discrete Semiconductor Products
	Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	TEMPFET®
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	49 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id	2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 25 V
FET Feature	Temperature Sensing Diode
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	P-TO220-7-230
Package / Case	TO-220-7

Environmental & Export Classifications

ATTRIBUTE	DESCRIPTION
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

Part number	BTS282Z E3230
Base part number	BTS282Z

Product Tags:

BTS282Z N Channel MOSFET

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