N Channel Transistor Discrete Semiconductor Devices SIHF10N40D-E3 Power Mosfets

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Guangzhou Topfast Technology Co., Ltd.

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Product Technical Specifications

N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	400
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	5
Maximum Continuous Drain Current (A)	10
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (MOhm)	600@10V
Typical Gate Charge @ Vgs (nC)	15@10V
Typical Gate Charge @ 10V (nC)	15
Typical Input Capacitance @ Vds (pF)	526@100V
Maximum Power Dissipation (mW)	33000
Typical Fall Time (ns)	14
Typical Rise Time (ns)	18
Typical Turn-Off Delay Time (ns)	18
Typical Turn-On Delay Time (ns)	12
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Supplier Package	TO-220FP
Pin Count	3
Standard Package Name	TO-220
Mounting	Through Hole
Package Height	16.12(Max)
Package Length	10.63(Max)
Package Width	4.83(Max)
PCB changed	3
Tab	Tab
Lead Shape	Through Hole

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